NCE01H21T mosfet equivalent, nce n-channel enhancement mode power mosfet.
* VDSS =100V,ID =210A RDS(ON) < 4.0mΩ @ VGS=10V （Typ：3.1 mΩ）
* Good stability and uniformity with high EAS
* High density cell design for ultra low Rdson
.
General Features
* VDSS =100V,ID =210A RDS(ON) < 4.0mΩ @ VGS=10V （Typ：3.1 mΩ）
* Good stability and uniformity .
The NCE01H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications.
General Features
* VDSS =100V,ID =210A RDS(ON) < 4.0mΩ @ VGS=10V （Typ：3.1 mΩ）
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